Improvement of the Interface between Selectively Deposited Aluminum and Silicon by Annealing
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
Nishikawa S
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
-
TANI Kouichi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
-
NISHIKAWA Satoshi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
-
TANI Keiji
Japan Atomic Energy Research Institute
-
Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
-
Tani K
Research And Development Center Ricoh Company Ltd.
関連論文
- Improvement of the Interface between Selectively Deposited Aluminum and Silicon by Annealing
- Modeling of Mechanism of Leakage in a Shallow p^+/n Junction Formed by Preamorphization
- Structure Analysis of δ-phase in Sb-Te Alloys by HRTEM
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection
- Electron Thermal Diffusivity in JFT-2 Tokamak with NBI Heating
- Optimum Electrode Materials for Ta_2O_5 Capacitors for High- and Low-Temperature Processes
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- A Novel Clean Ti Salicide Process Using Grooved Gate Structure
- Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
- Structural Analysis of Ag-In-Sb-Te Phase-Change Material(Optics and Quantum Electronics)
- MOS Gate Etching Using an Advanced Magnetron Etching System : Etching and Deposition Technology
- Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
- A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
- Submicron Ferroelectric Capacitors Fabricated by Chemical Mechanical Polishing Process for High-Density Ferroelectric Memories
- Submicron Ferroelectric Capacitors Fabricated by CMP Process for High-Density FeRAMs
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
- Determination of Optimum Positions of the Poloidal Field Coils of a Large Tokamak
- Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Implants into Polysilicon Emitters
- Effect of Toroidal Field Ripple on Fast Ion Behavior in a Tokamak
- Impurity Evolution in a Beam-Heated Tokamak
- Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
- MOS Gate Etching Using an Advanced Magnetron Etching System
- Effects of toroidal field ripple on the loss of energetic injected ions and toroidal coil configuration in a tokamak reactor.