Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
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概要
- 論文の詳細を見る
The impact of phosphorus implants into polysilicon emitters on boron diffusion in the underlying single-crystal base region of SiGe heterojunction bipolar transistors has been investigated. Anomalously enhanced boron diffusion, which is believed to be induced by implant-induced excess interstitials diffusing into the single-crystal region through the polysilicon emitter, is observed after annealing. In situ phosphorus-doped polysilicon is shown to be very effective in suppressing the diffusion enhancement and in realizing a very sharp boron profile.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
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Ito Shuji
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Ito Shuji
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.,
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