Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters

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1996-02-01

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Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
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Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Implants into Polysilicon Emitters
Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition
Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
MOS Gate Etching Using an Advanced Magnetron Etching System

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