A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
-
Nishikawa S
Mitsubishi Electric Corp. Hyogo Jpn
-
NISHIKAWA Satoshi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
-
Yamaji Tetsuo
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
-
Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
-
Yamaji T
Tokyo Denki Univ. Tokyo Jpn
-
Yamaji Tetsuo
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
-
Yamanobe T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
-
IGARASHI Yasushi
Semiconductor technology Laboratory, OKI Electric Industry Co., Ltd.
-
Igarashi Y
Semiconductor Tech.lab. Oki Electric Industry Co. Ltd.
-
Igarashi Yasushi
Semiconductor Tech.Lab., Oki Electric Industry Co., Ltd.
関連論文
- Improvement of the Interface between Selectively Deposited Aluminum and Silicon by Annealing
- Modeling of Mechanism of Leakage in a Shallow p^+/n Junction Formed by Preamorphization
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Preparation of a-Si:H/a-Si_C_x:H Superlattices
- Influence of RF Power on Properties of a-Si_Ge_x:H Prepared by RF Glow Discharge Decomposition
- Effect of H_2 Plasma Etching during Glow-Discharge Deposition of Amorphous Carbon Films
- Two Components of Light-Induced Photoconductivity Decays in a-Si:H
- Influence of Deposition Conditions on Properties of Hydrogenated Amorphous Silicon Prepared by RF Glow Discharge
- Fabrication of a New Multilayered Amorphous Silicon Photoreceptor Drum by Glow Discharge Method
- Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection
- A Novel Fabrication Technique of Multilayer Stacked Silicon-on-Insulator Structure Applicable to Three-Dimensional ICs
- Optimum Electrode Materials for Ta_2O_5 Capacitors for High- and Low-Temperature Processes
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Effect of W Film Stress on W-Gate MOS Characteristics
- Evaluation of Laser CVD Tungsten for Gete Electrode : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- A Novel Clean Ti Salicide Process Using Grooved Gate Structure
- Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
- MOS Gate Etching Using an Advanced Magnetron Etching System : Etching and Deposition Technology
- Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
- A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
- Submicron Ferroelectric Capacitors Fabricated by Chemical Mechanical Polishing Process for High-Density Ferroelectric Memories
- Submicron Ferroelectric Capacitors Fabricated by CMP Process for High-Density FeRAMs
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
- Copper Interconnects Fabricated by Dry Etching Process
- Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Implants into Polysilicon Emitters
- High-Reliability Copper Interconnects through Dry Etchirng Process
- Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
- MOS Gate Etching Using an Advanced Magnetron Etching System