Modeling of Mechanism of Leakage in a Shallow p^+/n Junction Formed by Preamorphization

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Improvement of the Interface between Selectively Deposited Aluminum and Silicon by Annealing
Modeling of Mechanism of Leakage in a Shallow p^+/n Junction Formed by Preamorphization
Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection
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Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
A Novel Clean Ti Salicide Process Using Grooved Gate Structure
Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
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Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
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Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Implants into Polysilicon Emitters
Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition
Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
MOS Gate Etching Using an Advanced Magnetron Etching System

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