Optimum Electrode Materials for Ta_2O_5 Capacitors for High- and Low-Temperature Processes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-03-15
著者
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NISHIKAWA Satoshi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
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MATSUHASHI Hideaki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.,
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Nishikawa Satoshi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
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Matsuhashi Hideaki
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
関連論文
- Improvement of the Interface between Selectively Deposited Aluminum and Silicon by Annealing
- Modeling of Mechanism of Leakage in a Shallow p^+/n Junction Formed by Preamorphization
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection
- Optimum Electrode Materials for Ta_2O_5 Capacitors for High- and Low-Temperature Processes
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Effect of W Film Stress on W-Gate MOS Characteristics
- Evaluation of Laser CVD Tungsten for Gete Electrode : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- A Novel Clean Ti Salicide Process Using Grooved Gate Structure
- Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation
- MOS Gate Etching Using an Advanced Magnetron Etching System : Etching and Deposition Technology
- Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
- A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
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- Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Implants into Polysilicon Emitters
- Effects of Contact-Hole-Etching Damage on Aluminum Chemical Vapor Deposition
- Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters
- MOS Gate Etching Using an Advanced Magnetron Etching System