Matsuhashi Hideaki | Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
スポンサーリンク
概要
関連著者
-
MATSUHASHI Hideaki
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.,
-
Matsuhashi Hideaki
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
-
Nishikawa S
Mitsubishi Electric Corp. Hyogo Jpn
-
NISHIKAWA Satoshi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
-
Matsuhashi Hideki
Research Institute of Electrical Communication, Tohoku University
-
Nishikawa Satoshi
Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.
-
Matsuhashi H
Oki Electric Ind. Co. Ltd. Tokyo Jpn
-
Ohno Shinji
Department Of Chemical Engineering & Technology Faculty Of Engineering Kyushu University
-
Ohno S
Semiconductor Tech. Lab. Oki Electric Industry Co. Lid.
-
Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
-
Ohno Seigo
Semiconductor Technology Laboratory Oki Electric Industry Co .ltd.
-
TANI Kouichi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
-
TANI Keiji
Japan Atomic Energy Research Institute
-
Tani K
Research And Development Center Ricoh Company Ltd.
-
Yamaji T
Tokyo Denki Univ. Tokyo Jpn
-
YAMANOBE Tomomi
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
-
NISHIKAWA Satosi
Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd.
-
Yamanobe T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
-
Nishikawa Satoshi
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
-
HIZAWA Kazuya
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.
-
Hizawa Kazuya
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
著作論文
- Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection
- Optimum Electrode Materials for Ta_2O_5 Capacitors for High- and Low-Temperature Processes
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Formation of c-Axis-Oriented Bi_4Ti_3O_ Films with Extremely Flat Surface by Spin-Coating
- Effect of W Film Stress on W-Gate MOS Characteristics
- Evaluation of Laser CVD Tungsten for Gete Electrode : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- A Novel Clean Ti Salicide Process Using Grooved Gate Structure