Influence of RF Power on Properties of a-Si_<1-x>Ge_x:H Prepared by RF Glow Discharge Decomposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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Nishikawa Satoshi
Research Laboratory Oki Electric Industry Co. Lid.
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Nishikawa S
Mitsubishi Electric Corp. Hyogo Jpn
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Watanabe Teruo
Futaba Corporation
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Watanabe T
Components Development Group Sony Corporation
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Watanabe Tetsu
Components Development Group Sony Corporation
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NIHEI Kohji
Research Laboratory, Oki Electric Industry Co., Ltd.
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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KAKINUMA Hiroaki
Research Laboratory, OKI Electric Industry Co. Lid.
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WATANABE Tsukasa
Research Laboratory, OKI Electric Industry Co. Lid.
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NIHEI Kouji
Research Laboratory, OKI Electric Industry Co. Lid.
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Kakinuma Hiroaki
Research Laboratory Oki Electric Industry Co. Lid.
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Kakinuma Hiroaki
The Devices Technology Laboratory Oki Electric Industry Co. Ltd.
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Kakinuma Hiroaki
Research Laboratory Oki Electric Industry Co. Ltd.
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Nihei K
Research Laboratory Oki Electric Industry Co. Ltd.
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