Phosphine Doping Effects in the Plasma Deposition of Polycrystalline Silicon Films
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概要
- 論文の詳細を見る
The effects of phosphine doping on the electronic and structural properties of polycrystalline silicon (poly-Si) films prepared by plasma chemical vapour deposition using SiF_4/SiH_4/H_2 gases have been investigated. With increasing doping ratio, the conductivity rapidly increases and takes a maximum value of 80 S・cm^<-1> at [PH_3]/[SiH_4](=γ)〜1.7×10^<-2>, while it decreases at larger doping ratios. This change is found to be caused mainly by the change in the carrier density, by Hall measurements. X-ray diffraction and transmission electron microscopy indicate that this electronic change is associated with the change in the preferred orientation of grains from <110> to <111> with a slight decrease in grain size, and the structural change from crystalline to amorphouslike with increasing γ.
- 社団法人応用物理学会の論文
- 1992-10-01
著者
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Kakinuma Hiroaki
Research Laboratory Oki Electric Industry Co. Lid.
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Kakinuma Hiroaki
The Devices Technology Laboratory Oki Electric Industry Co. Ltd.
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Kakinuma Hiroaki
Research Laboratory Oki Electric Industry Co. Ltd.
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Tsuruoka T
The Authors Are With R & D Department Components Division Oki Electric Industry Co. Ltd.
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Tsuruoka Taiji
Research And Development Division Oki Electric Ind. Co. Ltd.
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Mohri Mikio
Research Laboratory, Oki Electric Industry Co., Ltd.
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Mohri M
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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