Y-Ba-Cu-O Film Growth by OMCVD Using N_2O

概要

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By using N_2O gas as an oxygen source, Y-Ba-Cu-O films prepared at the growth temperature of 650℃ on the SrTiO_3(100) substrate showed zero resistance at 79 K, while by using O_2 gas, a growth temperature of 800℃ was required to obtain the same film quality. The deposition rate of Y-Ba-Cu-O films on MgO(100) substrates by using N_2O gas was nearly one half of that using O_2 gas. The deposition rate monotonically increased with increasing of the growth temperature from 600℃ to 800℃ The electrical quality of films prepared on the substrate became poorer in the series of SrTiO_3(100), MgO(100) and Si(100) substrates. X-ray diffraction patterns of Y-Ba-Cu-O films grown on SrTiO_3(100) and MgO(100) substrates indicate c-axis orientation, but those of films on Si(100) substrates did not indicate c-axis orientation.
社団法人応用物理学会の論文
1989-10-20