In/(Ba, Rb)BiO_3/SrTiO_3(Nb) Three-Terminal Device

概要

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A superconductor-based three-terminal device of In/(Ba, Rb)BiO_3/SrTiO_3(Nb) structure was produced. The(Ba, Rb)BiO_3/SrTiO_3(Nb) interface is a Schottky junction with a barrier height of 1.8 eV, while the (Ba, Rb)BiO_3/In interface is a junction with rectifying characteristics. The static properties of the three-terminal device as a transistor were determined in common-base and common-emitter configurations. With a base thickness of up to 50 nm, α=0.94 and β=10 were obtained, confirming that this device operated as a transistor.
社団法人応用物理学会の論文
1994-03-01