Phosphorus Doping Using Electron Cyclotrorn Resonance Plasma for Large-Area Polycrystalline Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
We have investigated phosphorus doping using an electron cyclotron resonance (ECR) plasma, for application to the poly-Si driving circuits of liquid crystal displays or image sensors. The PH_3/He was ionized and accelerated to poly-Si and c-Si substrates with a self bias of - 220 V. The P concentration, as detected by secondary ion mass spectroscopy (SIMS), is 〜5×10^<21> cm^<-3> at the surface, which decayed to 〜10^<17> cm^<-3> within 50-100 nm depth. The surface is found to be etched during doping. The etching is restored by adding a small amount of SiH_4 and the sheet resistance R_s decreases. The optimized as-irradiated R_s is 〜1×10^5 Ω/□ and 1.7×10^2 Ω/□ for poly-Si and (110) c-Si, respectively. The dependence of R_s on the substrates and the anomalous diffusion constants derived from SIMS are also discussed.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Kakinuma Hiroaki
Research Laboratory Oki Electric Industry Co. Lid.
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Kakinuma Hiroaki
The Devices Technology Laboratory Oki Electric Industry Co. Ltd.
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Kakinuma Hiroaki
Research Laboratory Oki Electric Industry Co. Ltd.
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Tsuruoka T
The Authors Are With R & D Department Components Division Oki Electric Industry Co. Ltd.
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Tsuruoka Taiji
Research And Development Division Oki Electric Ind. Co. Ltd.
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Mohri Mikio
Research Laboratory, Oki Electric Industry Co., Ltd.
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Mohri M
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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