Effect of SiF_4/SiH_4/H_2 Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• We have studied in detail the effect of gas flow rates on the film properties of low-temperature(300℃) polycrystalline silicon (poly-Si) films prepared by conventional plasma enhanced chemical vapor deposition (13.56MHz) with SiF_4/ SiH_4/H_2 gases. The effect of SiH_4 flow rate on crystallization is shown to be large. A small amount of SiH_4 with high SiF_4 and H_2 flow rates (50≦[H_2]/[SiH_4]≦1200, 20≦[SiF_4]/[SiH_4]≦150, 1≦[H_2]/[SiF_4]≦16) is important to form poly-Si films. The poly-Si films deposited under such optimized conditions had shown preferential <110>-orientation and the crystalline fraction is estimated to be more than 80. The deposition rates are in the range of 5-30 nm/min. The conductivity is in the range of 10^-8 -10^-6 S/cm. Further, the electrical conduction indicates an activation type, and the activation energy is in the range of 0.5-.6 eV.

• 社団法人電子情報通信学会の論文
• 1994-10-25

著者

• Kakinuma Hiroaki

  The Devices Technology Laboratory Oki Electric Industry Co. Ltd.

• Kakinuma Hiroaki

  Research Laboratory Oki Electric Industry Co. Ltd.

• Tsuruoka T

  The Authors Are With R & D Department Components Division Oki Electric Industry Co. Ltd.

• Mohri Mikio

  the Devices Technology Laboratory, OKI Electric Industry Co., Ltd.,

• Tsuruoka Taiji

  the Devices Technology Laboratory, OKI Electric Industry Co., Ltd.,

• Mohri M

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• KAKINUMA Hiroaki

  The Department of Pediatrics, Shimoshizu National Hospital Yotsukaido

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