Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-03-15
著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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WEI Long
Institute of Materials Science, University of Tsukuba
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Wei Long
Institute Of Materials Science University Of Tsukuba
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SHIKATA Shin-ichi
Opto-electronics Laboratories, Sumitomo Electric Industries Ltd.
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FUJII Satoshi
Opto-electronics Laboratories, Sumitomo Electric Industries Ltd.
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Fujii Sadao
Central Research Laboratory Kanegafuchi Chemical Industry Co.
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Shikata Shin-ichi
Opto-electronics Laboratories Sumitomo Electric Industries Ltd.:(present Address) Itami Research Lab
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Fujii Satoshi
Opto-electronics Laboratories Sumitomo Electric Industries Ltd.
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