Soda Eiichi | Semiconductor Leading Edge Technologies Inc.

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著作論文

Etch-byproduct Pore Sealing for ALD-TaN Deposition on Porous Low-k Film
Novel via Chain Structure for Failure Analysis at 65 nm-Node Fixing OPC Using Inner and Outer via Chain Dummy Patterns(Microelectronic Test Structures)
Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance
Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography
Etch-Byproduct Pore Sealing for Atomic-Layer-Deposited-TaN Deposition on Porous Low-$k$ Film
Application of Electron Projection Lithography to Via Formation in Two-Layer Metallization

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