Etch-byproduct Pore Sealing for ALD-TaN Deposition on Porous Low-k Film
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Ogawa Shinichi
Semiconductor Leading Edge Technologies Inc.
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Ogawa Shinichi
Semiconductor Leading Edge Technologies Inc. (selete)
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Okamura Hiroshi
Semiconductor Leading Edge Technologies Inc. (selete)
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OHASHI Naofumi
Semiconductor Leading Edge Technologies, Inc.
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FURUYA Akira
Semiconductor Leading Edge Technologies Inc. (Selete)
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SODA Eiichi
Semiconductor Leading Edge Technologies Inc. (Selete)
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OHTSUKA Nobuyuki
Semiconductor Leading Edge Technologies Inc. (Selete)
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SHIMADA Miyoko
Semiconductor Leading Edge Technologies Inc. (Selete)
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Soda Eiichi
Semiconductor Leading Edge Technologies Inc.
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Ohashi Naofumi
Semiconductor Leading Edge Technologies Inc. (selete)
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Shimada Miyoko
Semiconductor Leading Edge Technologies Inc.
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Ohashi Naofumi
Semiconductor Leading Edge Technologies Inc.
関連論文
- Plasma Cure Process for Porous SiOCH Films using CF_4 Gas
- Plasma-Enhanced ALD Ru Thin Films on PVD-TaN Films with Smooth Morphology at Low Temperature Using DER Ru Precursor
- Etch-byproduct Pore Sealing for ALD-TaN Deposition on Porous Low-k Film
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- Characterization of Low-k Interconnect Dielectrics by EELS
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- Process-Induced Damage Characterization of Patterned Low-$\kappa$ Film Using Electron Energy Loss Spectroscopy Technique
- Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography
- Etch-Byproduct Pore Sealing for Atomic-Layer-Deposited-TaN Deposition on Porous Low-$k$ Film
- Application of Electron Projection Lithography to Via Formation in Two-Layer Metallization
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization