Process-Induced Damage Characterization of Patterned Low-$\kappa$ Film Using Electron Energy Loss Spectroscopy Technique
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概要
- 論文の詳細を見る
A patterned low dielectric constant ($\kappa$) film composed of a porous Si–O–C layer (p-SiOC) and a Cu interconnect is characterized by electron energy loss spectroscopy (EELS) with transmission electron microscopy. The relative thickness distribution map is obtained by the valence EELS (VEELS) log-ratio technique with nanometer scale resolution. Two regions with depleted carbon composition and varied relative thickness are found in the p-SiOC layer near the side wall of Cu lines, which are ascribed to the process-induced damage. They cannot be identified only by the conventional elemental mapping obtained by the core EELS (CEELS). Since the VEELS log-ratio technique is convenient to perform, this should be a useful method to routinely characterize the process-induced damage of the patterned low-$\kappa$ films with Cu interconnects for advanced integration devices.
- 2010-11-25
著者
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Otsuka Yuji
Toray Research Center Inc.
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Ogawa Shinichi
Semiconductor Leading Edge Technologies Inc.
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Kawasaki Naohiko
Toray Research Center Inc.
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Tanaka Isao
Department Of Internal Medicine Suzuka Kaisei Hospital
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Ogawa Shinichi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shimizu Yumiko
Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu 520-8567, Japan
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Otsuka Yuji
Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu 520-8567, Japan
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