Electronic Mechanism of Ag-Cluster Formation in AgBr and AgI
スポンサーリンク
概要
- 論文の詳細を見る
XVe have carried ottt first principles tnolecttlar orbital calctrlations on an interstitial Ag in AgBrand Agl, trsing tlae discrete vatriational (DV)-Xa taaethod, Althottglr AgBr and Agl are consideredto be ionic coraapovxnds, Ag-4d orbitals are xvell adraaixed with anion-p orbitals in tlaeir valenceband. In tlae presence of an interstiti?tl Ag (Agj), an interstitial level aj.>pears xvithin the bandgap. Tlae interstitial orbital is fotrnd to be zaaore delocalized atrotrnd the Agn in AgBr tlaan inAc'l. As a restzlt. the interstitial level in Ao-Br reinforces the A'j-A" covalent bond. The Ao'j-Aab/b<)bbbcovalent bond in AgBr is strouager than any other cox'alent bonds arotrnd the Agn. On tl'ne otherhatud, the Agj-Ag covalent bot'rd in Agl is rntrcl'x 'xveaker tlxan the Ag-I bond at norna?tl sites.Since the forrnation of strong Agi-Ag bortd is essential f'or the agglottaeration of Ag attoraas, 2tl'lAg cltrster can be forttaed easier in AgBr tltarn in Agl.
- 社団法人日本物理学会の論文
- 1998-06-15
著者
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TANAKA Isao
Department of materials science and engineering, Kyoto University
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ADACHI Hirohiko
Department of materials science and engineering, Kyoto University
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Tanaka Isao
Department Of Materials Science And Engineering Kyoto University
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Tanaka I
Division Of Biological Science Graduate School Of Science Hokkaido University
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Adachi H
Kyoto Univ. Kyoto
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Adachi Hirohiko
Department Of Material Science And Engineering Kyoto University
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Matsunaga Katsuyuki
Department Of Materials Science And Engineering Kyoto University
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Adachi H
Department Of Physics Kyoto University
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Adachi H
Central Research Laboratories Matsushita Electric Ind. Co.
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Matsunaga K
Kyoto Univ. Kyoto Jpn
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Tanaka I
Fukui Prefecture Agricultural Experiment Station Fukui Jpn
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Adachi Hirohiko
Department Of Chemistry Hyogo University Of Teacher Education
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Tanaka Isao
Department Of Internal Medicine Suzuka Kaisei Hospital
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Adachi Hirohiko
Department of Materials Science and Engineering,Kyoto University
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- PREFACE
- Special Issue on Grain Boundaries, Interfaces, Defects and Localized Quantum Structures in Ceramics