Structure of Amorphous Silicon Nitride(a-Si3N4) (高次制御材料-2-<特集>)
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概要
- 論文の詳細を見る
Computer simulation, using the molecular dynamics (MD) technique, has been carried out on an silicon nitride (a-Si<SUB>3</SUB>N<SUB>4</SUB>) with simple Busing-type potentials. Furthermore, the local structure of chemical vapor-deposited (CVD) a-Si<SUB>3</SUB>N<SUB>4</SUB> has been studied at the Si Kedge by the use of a laboratory XAFS system. From the MD simulation and XAFS results, the short-range structural arrangement of a-Si<SUB>3</SUB>N<SUB>4</SUB> comprises tetrahedral SiN<SUB>4</SUB> units. The MD and XAFS results presented in this study also indicate that there exist only a small number defects such as dangling bonds.
- 社団法人 粉体粉末冶金協会の論文
著者
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Umesaki Norimasa
Osaka National Research Institute (onri) Aist
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Niihara Koichi
The Institute Of Scientific And Industrial Research Osaka University
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Kamijo Nagao
Osaka National Research Institute Aist
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Tanaka Isao
Department Of Internal Medicine Suzuka Kaisei Hospital
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Kamijo Nagao
Osaka National research Institute, AISI
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Umesaki Norimasa
Osaka National research Institute, AISI
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Niihara Koichi
The Institute of Science and Industrial Research, Osaka University
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