OHASHI Naofumi | Semiconductor Leading Edge Technologies, Inc.
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概要
関連著者
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OHASHI Naofumi
Semiconductor Leading Edge Technologies, Inc.
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Ohashi Naofumi
Device Development Center Hitachi Ltd.
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Ohashi Naofumi
Semiconductor Leading Edge Technologies Inc.
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武田 健一
日立製作所 中央研究所
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Ogawa Shinichi
Semiconductor Leading Edge Technologies Inc.
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Ogawa Shinichi
Semiconductor Leading Edge Technologies Inc. (selete)
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Okamura Hiroshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Takeda Ken-ichi
Central Research Laboratory Hitachi Ltd.
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NOGUCHI Junji
Micro Device Division, Hitachi, Ltd.
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YAMAGUCHI Hizuru
Renesas Technology Corp.
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FURUYA Akira
Semiconductor Leading Edge Technologies Inc. (Selete)
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SODA Eiichi
Semiconductor Leading Edge Technologies Inc. (Selete)
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OHTSUKA Nobuyuki
Semiconductor Leading Edge Technologies Inc. (Selete)
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SHIMADA Miyoko
Semiconductor Leading Edge Technologies Inc. (Selete)
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Soda Eiichi
Semiconductor Leading Edge Technologies Inc.
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Ohashi Naofumi
Semiconductor Leading Edge Technologies Inc. (selete)
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NOGUCHI Junji
Hitachi, Ltd., Micro Device Division
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SAITO Tatsuyuki
Hitachi, Ltd., Micro Device Division
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MARUYAMA Hiroyuki
Hitachi, Ltd., Micro Device Division
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KUBO Maki
Hitachi, Ltd., Micro Device Division
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TAKEDA Ken-ichi
Hitachi, Ltd., Central Research Laboratory
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Noguchi Junji
Device Development Center Hitachi Ltd.
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Maruyama Hiroyuki
Hitachi Ltd. Micro Device Division
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Shimada Miyoko
Semiconductor Leading Edge Technologies Inc.
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Kubo Maki
Device Development Center Hitachi Ltd.
著作論文
- Etch-byproduct Pore Sealing for ALD-TaN Deposition on Porous Low-k Film
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on NH_3-Plasma Treatment in Cu Interconnects
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization