Fast Electromigration-lifetime Prediction of Al-based Layered Metallization using the Similarity of Resistance Increase Curve

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-04-15

著者

• Hinode Kenji

  Central Research Laboratory Hitachi Lid.

• Kondo Seiichi

  Central Research Laboratory Hitachi Ltd.

• DEGUCHI Osamu

  Toho University, Faculty of Science

• Deguchi Osamu

  Toho University Faculty Of Science

関連論文

• Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
• Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
• Dielectric Breakdown and Light Emission in Copper Damascene Structure under Bias-Temperature Stress
• Slurry Chemical Corrosion and Galvanic Corrosion during Copper Chemical Mechanical Polishing
• Increase in Electrical Resistivity of Copper and Aluminum Fine Lines
• Time-Dependent Dielectric Breakdown of Interlevel Dielectrics for Copper Metallization
• Resistivity Increase In Ultrafine-Line Copper Conductor for ULSIs : Semiconductors
• Fast Electromigration-lifetime Prediction of Al-based Layered Metallization using the Similarity of Resistance Increase Curve
• Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
• Fast Electromigration-lifetime Prediction of Al-based Layered Metallization using the Similarity of Resistance Increase Curve

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