Soft X-Ray Microscope with Zone Plates at UVSOR I : Performance

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-10-15

著者

• Kihara H

  Tokyo And Osaka Universities

• Watanabe N

  Ntt Photonics Laboratories

• WATANABE Noriyuki

  NTT Photonics Laboratories

• Taniguchi M

  Department Of Applied Physics Faculty Of Engineering Osaka University

• Kihara H

  Nagoya Univ. Nagoya Jpn

• WATANABE Norio

  Department of Physics, Faculty of Science, Nagoya University

• SHIMANUKI Yoshio

  School of Dental Medicine, Tsurumi University

• TANIGUCHI Mieko

  Department of Physics, Faculty of Science, Nagoya University

• KIHARA Hiroshi

  Jichi Medical School, School of Nursing

• Taniguchi M

  Department Of Physics Faculty Of Science Nagoya University

• Taniguchi Mieko

  Department Of Physics Faculty Of Science Nagoya University

• Kihara Hiroshi

  Jichi Medical School School Of Nursing::(present Address)physics Laboratory Department Of The Libera

• Watanabe Norikazu

  Electrotechnical Lanoratory

• Kihara H

  Takara Shuzo Co. Ltd. Shiga Jpn

• Shimanuki Y

  Mitsubishi Materials Silicon Corp. Chiba Jpn

• Shimanuki Yasushi

  Central Research Institute Mitsubishi Metal Corporation

• WATANABE Noemia

  Laboratorio de Quartzo, Departamento de Materiais, Faculdade de Engenharia Mecanica, UNICAMP

• Watanabe Norio

  Department Of Mathematical Sciences School Of Science And Engineering Tokyo Denki University

• Kihara Hiroshi

  Jichi Mecical School School Ofnursing

• Watanabe Norio

  Department Of Industrial And Systems Engineering Chuo University

• Watanabe Norio

  Department of Chemistry, Faculty of Science, Gakushuin University

関連論文

• 28a-YM-2 KEKの新粉末中性子回折装置
• High Resolution Neutron Spectrometer LAM-80ET and Rotational Tunnelling in 4-Methypyridine N-Oxide
• Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
• Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
• Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
• Carbon Doping in AlGaAs Using Trimethylarsine by Metalorganic Chemical Vapor Deposition with a High-Speed Rotating Susceptor
• Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
• Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
• Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
• Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
• Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
• Soft X-Ray Microscope with Zone Plates at UVSOR I : Performance
• Observation of Wet Biological Specimen by Soft X-Ray Microscope with Zone Plates at UVSOR
• Focusing Efficiency and Resolution of a Nickel Phase Zone Plate for Soft X-rays
• ATP-Hydrolyzing Excitation State of the reconstituted α_3β_3 Complex of ATP Synthase from the Thermophilic Bacterium PS3: Structural Characteristics Shown by Time-Resolved Small-Angle X-Ray Scattering with Synchrotron Radiation
• Multiple-Object Discriminant Filter Generated by Simulated Annealing
• Hybrid Associative Memory Using an Incoherent Correlation System
• Crystal-Originated Singularities on Si Wafer Surface after SCl Cleaning
• 29p-P-13 高エネルギー陽子による中性子の生成
• DC Characteristics of InP HBTs under High-Temperature and Bias Stress
• High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
• Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density(Heterostructure Microelectronics with TWHM2003)
• 大型スポレ-ション中性子源による中性子散乱
• Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
• Evaluation of Transformation Expansion and Its Beneficial Effect on Cold Crack Susceptibility Using y-Slit Crack Test Instrumend with Strain Gauge(Materials, Metallurgy & Weldability)
• Effect of Transformation Expansion on Restraint Stress of Weldment in Relation to Cold Cracking of High Strength Steels(Materials, Metallurgy & Weldability)
• Effect of Residual Hydrogen Content on Cold Crack Susceptibility in Weld Metal of High Strength Steels
• Evaluation of Cold Crack Susceptibility in Weld Metal of High Strength Steels Using LB-TRC Test(Materials, Metallurgy, Weldability)
• Dynamic Observation with Nomarski Microscope of Hydrogen-Induced Delayed Cracking in High Strength Steel Weldments
• Propagation Behavior of Root Crack in Weld Metal of High Strength Steel on the Basis of AE Source Location Technique : Application of Acoustic Emission Technique for Weld Cracking (III)(Materials, Metallurgy, Weldability)
• Effect of Oxygen Content on Diffusible Hydrogen in Weld Metal in Inert-Gas Arc Welding for High Strength Steel
• Fractographic Investigation on Root Crack in the TRC Test of HY-130 Steel : Studies on Fractography of Welded Zone (II)
• Formation of p^+-layer in GaAs by dual implantation of Zn and As
• Redistrubution of Zn Implanted into GaAs
• Doppler Shift of the Light Scattered by Small Fragments of Tobacco Mosaic Virus
• Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
• Polymorphisms of Trimeresurus flavoviridis Venom Gland Phospholipase A_2 Isozyme Genes
• Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
• Magnetic Anisotropy Caused by the Directivity of Ni Grown in Amorphous Ni-P Alloy due to Abrasion
• Inductive Effect of Magnetic Field on Crystal Growth in Amorphous-Ni-P Alloy
• Al/GaAs Schottky Diode Implanted by Focused Ion Beam : Beam-Induced Physics and Chemistry
• Focused Ga Ion Beam Etching of Si in Chlorine Gas : Etching and Deposition Technology
• New Light Modulator Using GaSe Layered Crystal
• Al/GaAs Schottky Diode Implanted by Focused Ion Beam
• Focused Ga Ion Beam Etching of Si in Chlorine Gas
• Anomalously Large Shift of Absorption Edge of GaSe-Based Layered Crystal by Applied Electric Field
• Comparison of Slow-Neutron Intensities in Pulsed Spallation Neutron Sources with Various Proton Energies 0.8-3 GeV
• Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
• Annealing Behavior of Light Scattering Tomography Defect in the Denuded Zone of Si Wafers
• Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
• Impurity Content Characterization of Brazilian Quartz Lascas
• Remarks on some almost Hermitian structure on the tangent bundle
• High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
• 2. わが国に於ける中性子散乱設備 : 将来の展望: パルス中性子源について ( 中性子散乱研究の新しい展開)
• 1. 中性子散乱研究への招待 ( 中性子散乱研究の新しい展開)
• Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
• On a Statistical Model for Fuzzy Data(Journal of Japan Society for Fuzzy Theory and Systems)
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
• The Determination of Formation Constants by Measurements of Molar-volume Changes
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
• Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding

もっと見る 閉じる

スポンサーリンク