Formation of p^+-layer in GaAs by dual implantation of Zn and As
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-06-20
著者
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WATANABE Noriyuki
NTT Photonics Laboratories
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Arai M
National Institute For Materials Science
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Arai M
Department Of Applied Physics University Of Tokyo
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Arai Masao
National Institute For Research In Inorganic Materials
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Kato Yoji
Sony Corporation Research Center
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Arai M
Computational Materials Science Center (cmsc) National Institute Of Materials Science (nims)
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Arai Michio
Sony Corporation Research Center
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TAIRA Kenichi
Sony Corporation Research Center
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Watanabe Norikazu
Electrotechnical Lanoratory
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KASAHARA Jiro
Sony Corporation Research Center
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WATANABE Naozo
Sony Corporation Research Center
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Arai M
Univ. Tokyo Tokyo Jpn
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Kato Y
Department Of Biology Faculty Of Science Shizuoka University
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Kasahara Jiro
Department Of Aerospace Engineering Nagoya University
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Kasahara Jiro
Sony Corporation Materials Laboratory
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Watanabe N
Mitsubishi Materials Corp. Omiya Jpn
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Arai Masao
Computational Materials Science Center National Institute For Materials Science
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