Redistribution of Cr in Capless-Annealed GaAs under Arsenic Pressure
スポンサーリンク
概要
- 論文の詳細を見る
Redistribution of chromium (Cr) in Cr-doped semi-insulating GaAs annealed under widely changed conditions was studied by secondary ion mass spectrometry. Remarkable out-diffusion of Cr was observed from the surface of GaAs annealed above 800℃. This out-diffusion was found to be controlled by introducing arsenic partial pressure to the annealing ambient. Redistributed Cr profiles obtained experimentally were compared with the calculated ones, and a diffusion constant of Cr in GaAs was determined to be D=6.3×10^5 exp (-3.4 eV/kT).
- 社団法人応用物理学会の論文
- 1980-03-05
著者
関連論文
- Formation of p^+-layer in GaAs by dual implantation of Zn and As
- Redistrubution of Zn Implanted into GaAs
- Highly Reliable Bottom-Contact Pentacene TFTs with a Poly(p-chloroxylylene) Layer Selectively Grown on a Gate-Insulator
- Transmission Electron Microscopic Observation of Microdefectsin Zn^+ : Implanted GaAs
- Injection Luminescence in ZnTe Diodes
- Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- DLTS Study of Cr Trap Density in Thermally Converted Semi-Insulating GaAs
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- Radiation Annealing of GaAs Implanted with Si
- An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_As
- Forward and Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current : B-3: LASER
- Semi-Sealing Capless Anneal of GaAs
- Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- Near Infrared Absorption in P-Doped ZnTe Crystals
- Near Infrared Absorption in Phosphorus Doped P-Type ZnTe
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic Pressure
- Infrared Absorption in P-Type Semiconductors with Zincblebde Structure : Application to Zinc Telluride
- Photoluminescence Spectra of ZnTe with Anomalous Temperature Dependence
- Dielectric Constant of PbTe
- Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp