An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_<1-x>As
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概要
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An anomaly is reported in the relation of Hall coefficient to resistivity in n-type Al_xGa_<1-x>As. When Al content X is about 0.5, the relation of the Hall mobility to the resistivity has a maximum of 1.7 × 10^3 cm^2/V.s. at 0.1 Ω・cm at room temperature. The inconsistent mobilities so far reported are caused by this anomaly. At liquid nitrogen temperature, the anomaly is observed even at a lower X of 0.34, without the Hall mobility maximum. Possible models for explaining the experimental results are discussed.
- 社団法人応用物理学会の論文
- 1981-01-05
著者
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MORI Yoshifumi
Sony Corporation Research Center
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WATANABE Naozo
Sony Corporation Research Center
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AYABE Masaaki
Sony Corporation Research Center
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