Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp
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概要
- 論文の詳細を見る
A new method to anneal implanted silicon wafers in a few seconds using a halogen lamp as a radiation source is proposed. Boron-implanted (200 key, 1×10^<13> cm^<-2>) silicon wafers were completely activated with little diffusion by radiation for 6 seconds. Conventional annealing for 15 minutes caused diffusion of boron. It was found that the activation of implanted boron was determined by the maximum temperature during annealing.
- 社団法人応用物理学会の論文
- 1980-10-05
著者
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Arai Michio
Sony Corporation Research Center
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WATANABE Naozo
Sony Corporation Research Center
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NISHIYAMA Kazuo
Sony Corporation Research Center
関連論文
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