Semi-Sealing Capless Anneal of GaAs
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概要
- 論文の詳細を見る
Ion-implanted GaAs wafers were successfully annealed by a new capless method in a cylinder under arsenic vapor. A tool was designed to keep the necessary arsenic vapor pressure around the wafers. The semi-sealing capless anneal was as effective as the capless anneal using arsine. The doping efficiency was nearly 100% at low dose for the MES-FET application. The carrier concentration profiles agreed well with that predicted by the LSS range statistics.
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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KASAHARA Jiro
Sony Corporation Research Center
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WATANABE Naozo
Sony Corporation Research Center
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Kasahara Jiro
Department Of Aerospace Engineering Nagoya University
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Kasahara Jiro
Sony Corporation Materials Laboratory
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