Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-01-20

著者

• Watanabe N

  Ntt Photonics Laboratories

• WATANABE Noriyuki

  NTT Photonics Laboratories

• Arai M

  National Institute For Materials Science

• Arai M

  Department Of Applied Physics University Of Tokyo

• Arai Masao

  National Institute For Research In Inorganic Materials

• Arai M

  Computational Materials Science Center (cmsc) National Institute Of Materials Science (nims)

• Arai Michio

  Sony Corporation Research Center

• Watanabe Norikazu

  Electrotechnical Lanoratory

• KASAHARA Jiro

  Sony Corporation Research Center

• WATANABE Naozo

  Sony Corporation Research Center

• Arai M

  Univ. Tokyo Tokyo Jpn

• Kasahara Jiro

  Department Of Aerospace Engineering Nagoya University

• Kasahara Jiro

  Sony Corporation Materials Laboratory

• Watanabe N

  Mitsubishi Materials Corp. Omiya Jpn

• Arai Masao

  Computational Materials Science Center National Institute For Materials Science

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