WATANABE Naozo | Sony Corporation Research Center
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概要
関連著者
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WATANABE Naozo
Sony Corporation Research Center
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Kasahara Jiro
Sony Corporation Materials Laboratory
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Usui Setsuo
Sony Corporation Research Center
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Arai Michio
Sony Corporation Research Center
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KASAHARA Jiro
Sony Corporation Research Center
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Kasahara Jiro
Department Of Aerospace Engineering Nagoya University
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WATANABE Noriyuki
NTT Photonics Laboratories
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Watanabe Norikazu
Electrotechnical Lanoratory
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Kaneko Kunio
Sony Corporation Research Center
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Arai M
National Institute For Materials Science
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Arai M
Department Of Applied Physics University Of Tokyo
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Arai Masao
National Institute For Research In Inorganic Materials
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Kato Yoji
Sony Corporation Research Center
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Arai M
Computational Materials Science Center (cmsc) National Institute Of Materials Science (nims)
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MORI Yoshifumi
Sony Corporation Research Center
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Arai M
Univ. Tokyo Tokyo Jpn
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Kato Y
Department Of Biology Faculty Of Science Shizuoka University
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Watanabe N
Mitsubishi Materials Corp. Omiya Jpn
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DOSEN Masashi
SONY CORPORATION Research Center
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NISHIYAMA Kazuo
Sony Corporation Research Center
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AYABE Masaaki
Sony Corporation Research Center
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Arai Masao
Computational Materials Science Center National Institute For Materials Science
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Watanabe N
Ntt Photonics Laboratories
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USUI Setsuo
Sony Research Center
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Usui Setsuo
Sony Corporation Research Laboratory
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KAJIWARA Kazuo
Sony Corporation
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Ikeda Masao
Sony Corporation Research Center
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TAIRA Kenichi
Sony Corporation Research Center
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Sakurai Hiroshi
Graduate School Of Engineering Gunma University
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Sakurai Hiroshi
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Frontier Science Laboratories
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Kajiwara Kazuo
Sony Corporation Research Center
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KANAI Yasuo
Sony Corporation Research Laboratory
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Watanabe Naozo
Sony Corporation Research Laboratory
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Matsuda Osamu
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
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HONDA Masumi
Sony Corporation Research Center
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SANTA Sumio
Sony Corporation Research Center
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Matsuda Osamu
Sony Corporation Research Center
著作論文
- Formation of p^+-layer in GaAs by dual implantation of Zn and As
- Redistrubution of Zn Implanted into GaAs
- Injection Luminescence in ZnTe Diodes
- Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- Radiation Annealing of GaAs Implanted with Si
- An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_As
- Forward and Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current : B-3: LASER
- Semi-Sealing Capless Anneal of GaAs
- Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- Near Infrared Absorption in P-Doped ZnTe Crystals
- Near Infrared Absorption in Phosphorus Doped P-Type ZnTe
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic Pressure
- Infrared Absorption in P-Type Semiconductors with Zincblebde Structure : Application to Zinc Telluride
- Photoluminescence Spectra of ZnTe with Anomalous Temperature Dependence
- Dielectric Constant of PbTe
- Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp