Watanabe N | Mitsubishi Materials Corp. Omiya Jpn

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著作論文

Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
Carbon Doping in AlGaAs Using Trimethylarsine by Metalorganic Chemical Vapor Deposition with a High-Speed Rotating Susceptor
Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
Formation of p^+-layer in GaAs by dual implantation of Zn and As
Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
Magnetic Anisotropy Caused by the Directivity of Ni Grown in Amorphous Ni-P Alloy due to Abrasion
Inductive Effect of Magnetic Field on Crystal Growth in Amorphous-Ni-P Alloy
Al/GaAs Schottky Diode Implanted by Focused Ion Beam : Beam-Induced Physics and Chemistry
Focused Ga Ion Beam Etching of Si in Chlorine Gas : Etching and Deposition Technology
New Light Modulator Using GaSe Layered Crystal
Al/GaAs Schottky Diode Implanted by Focused Ion Beam
Focused Ga Ion Beam Etching of Si in Chlorine Gas
Anomalously Large Shift of Absorption Edge of GaSe-Based Layered Crystal by Applied Electric Field
Comparison of Slow-Neutron Intensities in Pulsed Spallation Neutron Sources with Various Proton Energies 0.8-3 GeV
Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
Indium Antimonide Layer Grown on Semi-insulating GaAs by Low-Pressure Metalorganie Chemical Vapor Deposition

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