Indium Antimonide Layer Grown on Semi-insulating GaAs by Low-Pressure Metalorganie Chemical Vapor Deposition
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概要
- 論文の詳細を見る
An indium antimonide single crystal is epitaxially grown on a semi-insulating GaAs. Layer thickness is changed from 0.15 to 4.2 μm. The X-ray diffraction peak (400) position does not change much with thickness, while its width decreases with increasing thickness. Crystal orientation is (100) from the early stage, and its crystallinity improves with thickness. The 300 K mobility increases from 940 to 25000 cm^2/V・s and carrier concentration decreases from 1.1x10^<18> to 8.0x10^<16> cm^<-3> with thickness. Their dependence on thickness and temperature indicates that lattice scattering, ionized impurity scattering and defect-related scattering all contribute to limiting the mobility.
- 社団法人応用物理学会の論文
- 1992-02-01
著者
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Iwamura Yasuo
Department of Elecltric Engineering, Kanagawa Univetsity
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Watanabe Naozo
Department of Elecltric Engineering, Kanagawa Univetsity
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Watanabe N
Mitsubishi Materials Corp. Omiya Jpn
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Iwamura Yasuo
Department Of Electrical Engineering Kanagawa University
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