Cathodoluminescence of Ga_2(S_<1-x>Te_x)_3 Crystals and Films : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
In a solid solution Ga_2(S_<1-x>Te_x)_3 prepared by an improved method, a uniform and intense cathodoluminescence is observed over the entire polycrystalline sample. The optimum composition for an intense luminescence is found to be x〜0.25. The composition dependence of an optical energy gap and the luminescence spectrum of the sample are obtained. Thin films are grown on Si substrate and their light-emitting characteristics are also measured. Composition dependence of emission intensity may be attributed to the fact that the sample is a mixture of a crystal with a tetragonal structure and an α-Ga_2S_3 crystal in the composition range 0<x<0.20.
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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Iwamura Yasuo
Department of Elecltric Engineering, Kanagawa Univetsity
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Moriyama Makoto
Department of Elecltric Engineering, Kanagawa Univetsity
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Moriyama Makoto
Department Of Electrical Engineering Faculty Of Engineering Kanagawa University
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HOKAKUBO Katuhiko
Department of Electrical Engineering, Faculty of Engineering, Kanagawa University
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Hokakubo Katuhiko
Department Of Electrical Engineering Faculty Of Engineering Kanagawa University
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