Thermoelectric Properties of Electrically Conductive III-Oxynitrides of Al_<1-x>In_xO_sN_t and InO_sN_t Prepared by Radio-Frequency Reactive Sputtering: Toward a Thermopower Device : Semiconductors
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概要
- 論文の詳細を見る
We have studied the thermoelectric properties of Al_<1-x>In_xO_sN_t and InO_sN_t prepared by radio-frequency sputtering, with the aim of fabricating a thermoelectric power device based on III-nitride semiconductors. For Al_<0.02>In_<0.98>O_<1.14>N_<0.49> with 0.34μm thickness, the maximum power factor was 3.24×10^<-4> W・m^<-1>・K^<-2> at 973K, and for InO_<0.82>N_<0.86> with 0.84μm thickness, it was 3.75×10^<-4> W・m^<-1・K^<-2> at 973K.
- 社団法人応用物理学会の論文
- 2002-12-01
著者
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Iwamura Yasuo
Department of Elecltric Engineering, Kanagawa Univetsity
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YAMAMOTO Atsushi
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology (AIST
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Yamaguchi Shigeo
Department Of Electrical Electronic And Information Engineering Kanagawa University:energy Electroni
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Iwamura Yasuo
Department Of Electrical Electronic And Information Engineering Kanagawa University:energy Electroni
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Yamamoto Atsushi
Energy Electronics Institute National Institute Of Advanced Industrial Science And Technology
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Yamamoto Atsushi
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology
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