Compositional Relation of GaAs_xSb_<1-x> and Related Compounds in Metalorganic Chemical Vapor Deposition Using tBAs and TMSb as Group V Precursors

概要

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Antimony rich solid composition in metalorganic chemical vapor deposition (MOCVD) of GaAs_xSb_<1-x>, x<P^0_<tBAs>+P^0_<TMSb> is generally observed in MOCVD growth in a lower-temperature range, 400 to low 500℃, in contrast to the arsenic rich solid compositional relation usually observed in growth in the higher-temperature range. A similar relation in GaAs_xSb_<1-x> is also observed. A growth model for this low-temperature range is proposed, where undecomposed or partially decomposed TMSb plays an essential role in the growth. Un-(or partially) decomposed TMSb has been assumed to remain at a higher concentration on the reaction surface than that evaluated applying a thermal equilibrium relation with Sb_4 and to have a high reaction equilibrium coefficient with Ga and to leave methyl groups on some surface Sb's thereby partly suppressing Ga surface reaction. Our calculated result explains essential features of the compositional relation.
社団法人応用物理学会の論文
1996-01-15