InAs Planar Diode Fabricated by Zn Diffusion

概要

論文の詳細を見る
An InAs planar diode with an optical window in the upper electrode was fabricated by the selective diffusion of Zn. Diethylzinc(DEZn)was used as a precursor for Zn and the diffusion process was carried out in a metalorganic chemical vapor deposition(MOCVD)system containing tertiary butylarsine(tBAs)as an As Precursor to suppress the thermal decomposition of InAs. Typical diffusion conditions were : temperature 530℃, time 30 min, pressure of DEZn and tBAs 1.0 Pa and 75 Pa, respectively, and ambient pressure 40kPa. Electrical characteristics of the diode were excellent : the ideality factor was as small as 1.05 for forward-biased current-voltage characteristics at 200 K and the reverse current was less than 10^<-8> A at 80 K. The peak photosensitivity at 175 K was 0.28 A/W around 3.2 μm in wavelength without antireflection coating. When the diode was driven at 150 mA at 80 K, two mid-infrared emission peaks were observed at 3.04 μm and 3.25 μm.
社団法人応用物理学会の論文
2000-10-15