Composition Dependence of Energy Gap of (CdTe)_<1-x>(In_2Te_3)_x with x<0.02
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-12-05
著者
-
Iwamura Yasuo
Department of Elecltric Engineering, Kanagawa Univetsity
-
Moriyama Makoto
Department of Elecltric Engineering, Kanagawa Univetsity
-
Moriyama Makoto
Department Of Electrical Engineering Faculty Of Engineering Kanagawa University
-
Iwamura Yasuo
Department Of Electrical Engineering Faculty Of Engineering Kanagawa University
関連論文
- New Light Modulator Using GaSe Layered Crystal
- Anomalously Large Shift of Absorption Edge of GaSe-Based Layered Crystal by Applied Electric Field
- Indium Antimonide Layer Grown on Semi-insulating GaAs by Low-Pressure Metalorganie Chemical Vapor Deposition
- InAs Planar Diode Fabricated by Zn Diffusion
- In-Depth Profile of Electrical Property of InAs Epitaxial Layer Grown on Semi-Insulating GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition
- Cathodoluminescence of Ga_2(S_Te_)_3
- Fluctuation in Lattice Constant near Miscibility Gap of CdTe-Ga_2Te_3 System
- Deep Levels of High Resistivity Sb Doped CdTe
- Compositional Relation of GaAs_xSb_ and Related Compounds in Metalorganic Chemical Vapor Deposition Using tBAs and TMSb as Group V Precursors
- Cathodoluminescence of Ga_2(S_Te_x)_3 Crystals and Films : Semiconductors and Semiconductor Devices
- Composition Dependence of Energy Gap of (CdTe)_(In_2Te_3)_x with x
- Epitaxial Growth of CdTe on PbTe by Close-Spaced Technique
- Thermoelectric Properties of Electrically Conductive III-Oxynitrides of Al_In_xO_sN_t and InO_sN_t Prepared by Radio-Frequency Reactive Sputtering: Toward a Thermopower Device : Semiconductors
- Vapor Phase Growth of CdTe on PbTe
- Composition Dependence of Energy Gap of Binary Systemm CdTe-In_2Te_3