Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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KODAMA Satoshi
NTT Photonics Labs., NTT Corporation
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ITO Hiroshi
NTT Photonics Labs., NTT Corporation
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Watanabe N
Ntt Photonics Laboratories
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FURUTA Tomofumi
NTT Photonics Laboratories
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WATANABE Noriyuki
NTT Photonics Laboratories
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KANDA Atsushi
NTT Photonics Laboratories
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MURAGUCHI Masahiro
NTT Electronics Corporation
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ISHIBASHI Tadao
NTT Photonics Laboratories
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Kanda Atsushi
Ntt Photonics Laboratories Ntt Corporation
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Koyanagi S
Hokkaido Univ. Sapporo Jpn
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Kodama S
Ntt Photonics Lab. Kanagawa Jpn
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Watanabe Norikazu
Electrotechnical Lanoratory
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Muraguchi Masahiro
Currently With Ntt Electronics Co. Ltd.
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Muraguchi Masahiro
Ntt Photonics Laboratories
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Muraguchi M
Ntt Electronics Corporation
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Kodama Satoshi
Ntt Photonics Labs. Ntt Corporation
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Watanabe N
Mitsubishi Materials Corp. Omiya Jpn
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Ishibashi T
Ntt Photonics Laboratories
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Furuta Tomofumi
Ntt Photonic Laboratories Ntt Corpration
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Ito H
Ntt Photonics Laboratories Ntt Corporation
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Kodama Satoshi
Ntt Photonics Laboratories
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WATANABE Noemia
Laboratorio de Quartzo, Departamento de Materiais, Faculdade de Engenharia Mecanica, UNICAMP
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Ishibashi Tadao
NTT Photonic Laboratories, NTT Corpration
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Ito Hiroshi
NTT Photonics Laboratories, NTT Corporation
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