Low Driving Voltage 40Gbit/s n-i-n Mach-Zehnder Modulator Fabricated on InP Substrate(Optical Active Devices and Modules, <Joint Special Section>Recent Progress in Optoelectronics and Communications)
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概要
- 論文の詳細を見る
We have developed a traveling-wave optical modulator using an n-i-n heterostructure fabricated on an InP substrate. The modulation characteristics are studied theoretically and experimentally. We obtained an extremely small π voltage (V_π) of 2.2V, even for a short signal-electrode length of 3mm. We confirmed a wide frequency bandwidth and clearly open eye diagrams at 40Gbit/s.
- 社団法人電子情報通信学会の論文
- 2005-05-01
著者
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TOHMORI Yuichi
NTT Photonics Laboratories
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ISHIBASHI Tadao
NTT Photonics Laboratories
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Tohmori Yuichi
Ntt Photonics Laboratories Ntt Corporation
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Yasaka Hiroshi
Ntt Photonics Laboratories Ntt Corporation
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Yasaka Hiroshi
Ntt Photonics Laboratories
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TSUZUKI Ken
NTT Photonics Laboratories, NTT Corporation
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Tsuzuki Ken
Ntt Corp. Atsugi‐shi Jpn
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Tsuzuki Ken
Ntt Photonics Laboratories Ntt Corporation
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Ishibashi Tadao
Ntt Photonics Laboratories Ntt Corporation
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Ishibashi Tadao
NTT Photonic Laboratories, NTT Corpration
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Tsuzuki Ken
NTT Photonics Laboratories
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