InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 μm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer

概要

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A new infrared photodetector has been developed that provides a high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum well (MQW) absorption layer. The insertion of a thick strained InAs well into the low electric field region of the collector makes it possible to maintain a large excitonic effect, and a high absorption coefficient is obtained even at a wavelength as long as 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-10-25