Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector

スポンサーリンク

概要

• 論文の詳細を見る

• The responsivity characteristics of heterojunction phototransistors (HPTs) with a strained InAs/InGaAs multiquantum well (MQW) absorption layer inserted in the base or collector are investigated. It is shown that although the hetero-emitter injects hot electrons into the base, the effective electron diffusion length in the base with MQWs becomes five times lower than that of a base without MQWs. This results in higher current gain for HPTs with MQWs in the collector. In addition, enhanced absorption coefficient due to excitonic absorption is observed only on HPT with MQW in the collector. Due to these two factors, a high responsivity of more than 10 A/W is realized at a wavelength around 2.35 μm for the device with MQWs in the collector.

• 2012-02-25

著者

• Sato Tomonari

  Ntt Photonics Laboratories

• Taue Shuji

  Okayama University, Okayama 700-8530, Japan

• Fukano Hideki

  Okayama University, Okayama 700-8530, Japan

• Egusa Hiroshi

  Okayama University, Okayama 700-8530, Japan

• Mitsuhara Manabu

  NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

• Mitsuhara Manabu

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Sato Tomonari

  NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

関連論文

• All-optical memory based on buried heterostructure photonic crystal lasers (レーザ・量子エレクトロニクス)
• Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy
• Monolithically Integrated Wavelength-Routing Switch Using Tunable Wavelength Converters with Double-Ring-Resonator Tunable Lasers
• Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector
• High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection
• InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 μm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer
• Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
• Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs

スポンサーリンク