Mitsuhara Manabu | NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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概要

• Mitsuhara Manabuの詳細を見る
• 同名の論文著者
• NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japanの論文著者

関連著者

• Mitsuhara Manabu

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• YAMAGUCHI Hiroshi

  NTT Basic Research Laboratories

• ONOMITSU Koji

  NTT Basic Research Laboratories

• Yamamoto Hideki

  Ntt Basic Research Laboratories

• Sato Tomonari

  Ntt Photonics Laboratories

• KONDO Yasuhiro

  NTT Photonics Laboratories

• Yasaka Hiroshi

  Ntt Photonics Laboratories

• FUKANO Hideki

  NTT Photonics Laboratories

• Taue Shuji

  Okayama University, Okayama 700-8530, Japan

• Fukano Hideki

  Okayama University, Okayama 700-8530, Japan

• Egusa Hiroshi

  Okayama University, Okayama 700-8530, Japan

• Mitsuhara Manabu

  NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

• Fukano Hideki

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Sato Tomonari

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Sato Tomonari

  NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

• Yasaka Hiroshi

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Kondo Yasuhiro

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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著作論文

• Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector
• InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 μm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer
• Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
• Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs

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