Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
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概要
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We fabricated micromechanical resonators using epitaxially grown GaNAs, in which in-plane tensile strain is induced by the growth on GaAs substrates. The resonators show significant improvement in resonance frequency and quality factor (Q) compared with those made of unstrained GaAs. The optimization of nitrogen concentration provides a resonator with the highest room-temperature Q value so far reported for III--V materials: the obtained Q of 1.2\times 10^{5} is about 30 times higher than that of resonators made of GaAs. The ultrahigh-Q GaNAs mechanical resonators are suitable for various sensing applications to unveil phenomena that have not yet been possible to examine.
- 2013-11-25
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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ONOMITSU Koji
NTT Basic Research Laboratories
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Yamamoto Hideki
Ntt Basic Research Laboratories
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Mitsuhara Manabu
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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