New Superconducting Sr_2CuO_<4_δ> Thin Films Prepared by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-02-15

著者

• NAITO Michio

  NTT Basic Research Laboratories

• KARIMOTO Shin-ichi

  NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

• Yamamoto H

  Ntt Basic Research Laboratories

• Yamamoto Hideki

  Ntt Basic Research Laboratories

• GREIBE Tine

  On leave from the technical University of Denmark

• Karimoto Shin-ichi

  Ntt Basic Research Laboratories

関連論文

• Anisotropic Resistivity of In-Plane-Aligned La_Sr_xCuO_4(100) Films on LaSrGaO_4(100) Substrates
• Effects of Substrate Materials on Properties of Superconducting Bi_2Sr_2CaCu_2O_8 Epitaxial Thin Films
• Interlayer Tunneling Spectroscopy and Evidence for the Evolution of a Pseudogap in Bi_2Sr_2CaCu_2O_8
• Improved Morphology and Surface Resistance of EuBa_2Cu_3O_ Thin Films on MgO Substrates Obtained by Intermittent Magnetron Sputter Deposition
• Low Microwave Surface Resistance in NdBa_2Cu_3O_ Films Grown by Molecular Beam Epitaxy
• New Superconducting Sr_2CuO_ Thin Films Prepared by Molecular Beam Epitaxy
• A New Superconducting Cuprate Prepared by Low-Temperature Thin-Film Synthesis in a Ba -Cu -O System
• Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa_2Cu_3O_ Thin Films
• Properties of Intrinsic Josephson Junctions in Bi_2Sr_2CaCu_2O_ Single Crystals(Special Issue on Superconductive Electron Devices and Their Applications)
• A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
• Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
• Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr_La_CuO_2 Thin Films
• New Superconducting PbSr_2CuO_ Prepared by a Novel Low-Temperature Synthetic Route Using Molecular Beam Epitaxy
• Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4
• A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
• Superconducting T′-La_Ce_xCuO_4 Films Grown by Molecular Beam Epitaxy
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
• Nucleus and Spiral Growth of N-face GaN(000\bar{1}) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
• Anisotropic Resistivity of In-Plane-Aligned La 2-xSrxCuO 4(100) Films on LaSrGaO 4(100) Substrates
• Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
• Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
• Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa2Cu3O7-δ Thin Films
• Nucleus and Spiral Growth of N-face GaN (0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
• 30aCA-13 Fermi surface reconstruction driven by orbital rearrangement in cuprates

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