Anisotropic Resistivity of In-Plane-Aligned La 2-xSrxCuO 4(100) Films on LaSrGaO 4(100) Substrates
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概要
- 論文の詳細を見る
We prepared in-plane-aligned La2-xSrxCuO4(100) films using LaSrGaO4(100) substrates by KrF laser ablation. The φ scan of X-ray diffraction and the large anisotropy of resistivity indicate a high degree of in-plane epitaxy. The T c of the in-plane-aligned La2-xSrxCuO4 (x=0.15) was 21.6 K. The critical temperatures measured along the c-axis were usually higher than those measured along the a-axis. We also observed voltage peaks at just above T c, corresponding to the abrupt decrease of the anisotropy of resistivity at T c.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-05-15
著者
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YAMASHITA Tsutomu
Research Institute of Electrical Communication Tohoku University
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MYOREN Hiroaki
Research Institute of Electrical Communication, Tohoku University
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SATO Hisashi
NTT Basic Research Laboratories
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NAITO Michio
NTT Basic Research Laboratories
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Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
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Bergs Roger
Research Institute Of Electrical Communication Tohoku University:(present Address)university Of Twen
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Tachiki Takashi
Research Institute Of Electrical Communication Tohoku University
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Suzuki Mitsumasa
Graduate School Of Information Science Tohoku University
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Chen Jian
Research Center For Analysis And Measurement Fudan University
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Naito Michio
NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Kanagawa 243-01, Japan
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