Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
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概要
著者
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SATO Hisashi
NTT Basic Research Laboratories
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Kasu Makoto
Ntt Basic Research Laboratories
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Harada Yuichi
Ntt Basic Research Laboratories
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Yamamoto Hideki
Ntt Basic Research Laboratories
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Hirama Kazuyuki
Ntt Basic Research Laboratories Ntt Corporation
関連論文
- Anisotropic Resistivity of In-Plane-Aligned La_Sr_xCuO_4(100) Films on LaSrGaO_4(100) Substrates
- Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
- Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
- Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
- Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
- Formation of Solid Solution of Al_Si_xN (0
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- New Superconducting Sr_2CuO_ Thin Films Prepared by Molecular Beam Epitaxy
- Third-Order Intermodulation Measurements for Superconducting Bandpass Filters(General Methods, Materials, and Passive Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices
- A New Superconducting Cuprate Prepared by Low-Temperature Thin-Film Synthesis in a Ba -Cu -O System
- Coherent Cooper-Pair Tunneling in a Superconducting Single Electron Transistor
- Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa_2Cu_3O_ Thin Films
- High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Enhancement and Stabilization of Hole Concentration of Hydrogen-Terminated Diamond Surface Using Ozone Adsorbates
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
- Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al_2O_3 Overlayer and its Electric Properties
- Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- In_Ga_As Quantum Point Contacts Utilizing Wrap-Gate Geometry
- Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer
- Arsenic-Doped n-Type Diamond Grown by Microwave-Assisted Plasma Chemical Vapor Deposition
- Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)
- Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr_La_CuO_2 Thin Films
- Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
- In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
- Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
- Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
- Diamagnetic Precursor State in High-T_c Oxide Superconductors near Optimal Doping Using Scanning Superconducting Quantum Interference Device Microscopy
- Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
- Nucleus and Spiral Growth of N-face GaN(000\bar{1}) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
- High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
- Origin of Schottky Barrier Modification by Hydrogen on Diamond
- Anisotropic Resistivity of In-Plane-Aligned La 2-xSrxCuO 4(100) Films on LaSrGaO 4(100) Substrates
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
- High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures (Special Issue : Recent Advances in Nitride Semiconductors)
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa2Cu3O7-δ Thin Films
- Nucleus and Spiral Growth of N-face GaN (0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
- 30aCA-13 Fermi surface reconstruction driven by orbital rearrangement in cuprates