Nucleus and Spiral Growth of N-face GaN(000\bar{1}) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
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概要
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Nucleus and spiral growth mechanisms of N-face GaN(000\bar{1}) were studied in selective-area metalorganic vapor phase epitaxy. An almost step-free N-face GaN surface is obtained by nucleus growth within a selective area without screw-type dislocations, while growth spirals are induced by the spiral growth mode when screw-type dislocations exist. The growth mechanism of N-face GaN is consistently explained by a theoretical analysis [W. K. Burton, N. Cabrera, and F. C. Frank: Philos. Trans. R. Soc. London, Ser. A 243 (1951) 299]. The step and activation energies are estimated to be 2.1 J/m<sup>2</sup>and 2.15 eV, respectively.
- 2013-03-25
著者
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Yamamoto Hideki
Ntt Basic Research Laboratories
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Akasaka Tetsuya
NTT Basic Research Laboratories
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Yamamoto Hideki
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Lin Chia-Hung
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Akasaka Tetsuya
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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