$ p$-InGaN/$n$-GaN Vertical Conducting Diodes on $n^{+}$-SiC Substrate for High Power Electronic Device Applications

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概要

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• We have investigated the current–voltage ($I$–$V$) characteristics of $ p$-InGaN/$n$-GaN vertical conducting diodes grown on $n^{+}$-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage ($V_{\text{B}}$) of 250 V was obtained with a low on-state resistance ($R_{\text{on}}$) of 1.28 m$\Omega$ cm2 when the $n$-GaN layer thickness was increased to 1800 nm, leading to the high figure-of-merit, $(V_{\text{B}})^{2}/R_{\text{on}}$, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the $ p$-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the $n$-GaN layer. These $I$–$V$ characteristics are preferable for high-power and high-temperature electronic device applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Nishikawa Atsushi

  Ntt Basic Research Laboratories Ntt Corporation

• Kumakura Kazuhide

  Ntt Basic Laboratories Ntt Corporation

• Akasaka Tetsuya

  NTT Basic Research Laboratories

• Akasaka Tetsuya

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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