Carbon Modulation-Doped P-AlGaAs/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 1992-06-15

著者

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Makimoto T

  Ntt Basic Research Laboratories

• CHANG Shi

  NTT Basic Research Laboratories

関連論文

• Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
• Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
• Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
• Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
• Carbon Modulation-Doped P-AlGaAs/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition
• In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
• Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
• Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
• High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
• GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
• 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
• Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
• Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
• Annealing Properties of Si-Atomic-Layer-Doped GaAs
• Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
• Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
• p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
• Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
• Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
• Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
• Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
• Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
• Temperature dependent characteristics of diamond MESFET
• Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
• High-Temperature Operation Over 500℃ of Pnp AlGaN/GaN HBTs
• Flow-rate modulation epitaxy of wurtzite AlBN
• Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors with Low-Base-Resistance (
• Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa_2Cu_3O_ Thin Films
• High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
• Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation Epitaxy
• InGaN quantum wells with small potential fluctuation
• p^+ -n^+ GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy
• High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
• High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN $ p$–$i$–$n$ Vertical Conducting Diode on $n$-SiC Substrate
• BGaN Micro-Islands as Novel Buffers for GaN Hetero-Epitaxy
• Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
• Interface Microstructure of MgB2/Al–AlOx/MgB2 Josephson Junctions Studied by Cross-Sectional Transmission Electron Microscopy
• RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
• A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
• A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
• Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
• Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
• Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
• Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• $ p$-InGaN/$n$-GaN Vertical Conducting Diodes on $n^{+}$-SiC Substrate for High Power Electronic Device Applications
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• Ohmic Contact to $p$-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• Low-Temperature Growth of MgB2 Thin films with $T_{\text{c}}$ above 38 K
• Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors With Low-Base-Resistance ($
• Influence of Impurity of MgO Substrates on Properties of Molecular Beam Epitaxy-Grown Superconducting NdBa2Cu3O7-δ Thin Films

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