Temperature dependent characteristics of diamond MESFET

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• SASAKI S.

  NTT Basic Research Laboratories

• Makimoto T

  Ntt Basic Research Laboratories

• Kasu M.

  Ntt Basic Research Laboratories Ntt Corporation

• YE H.

  NTT Basic Research Laboratories, NTT Corporation

• YAMAUCHI Y.

  NTT Basic Research Laboratories, NTT Corporation

• MAEDA N.

  NTT Photonics Laboratories, NTT Corporation

関連論文

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• In-Situ STM Observation of GaAs Surfaces after Nitridation
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• Carbon Modulation-Doped P-AlGaAs/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition
• In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
• Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
• Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
• Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
• Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
• Annealing Properties of Si-Atomic-Layer-Doped GaAs
• Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
• Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
• Temperature dependent characteristics of diamond MESFET

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