Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
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概要
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The (111)-oriented chemical-vapor-deposited diamond homoepitaxial layers with low defect density exhibited well-resolved free-exciton transitions in cathodoluminescence at 13 K and a sharp peak at 1332 cm-1 (linewidth: 1.9 cm-1) in Raman scattering. Furthermore, using these (111) layers, we fabricated metal-semiconductor field-effect transistors (FETs). FETs with an 11-μm-long gate exhibited a maximum drain current of 24 mA/mm and maximum transconductance of 14 mS/mm. These values are of the same order as those for the (001) orientation.
- 2004-07-15
著者
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Kasu Makoto
Ntt Basic Research Laboratories
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Kubovic Michal
Department Of Electron Devices And Circuits University Of Ulm
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ALEKSOV Aleksandar
Department of Electron Devices and Circuits , University of Ulm
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KOHN Erhard
Department of Electron Devices and Circuits , University of Ulm
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Sauer Rolf
Department Of Semiconductor Physics University Of Ulm
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Teofilov Nikolai
Department Of Semiconductor Physics University Of Ulm
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Sauer Rolf
Department of Semiconductor Physics, University of Ulm, Albert-Einstein Allee 45, D-89069 Ulm, Germany
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Kohn Erhard
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
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Teofilov Nikolai
Department of Semiconductor Physics, University of Ulm, Albert-Einstein Allee 45, D-89069 Ulm, Germany
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Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan
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Kubovic Michal
Department of Electron Devices and Circuits , University of Ulm
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Kubovic Michal
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
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Aleksov Aleksandar
Department of Electron Devices and Circuits, University of Ulm, Albert-Einstein Allee 45, D-89081 Ulm, Germany
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